2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.
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2N3035 Datasheet, Equivalent, Cross Reference Search
The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard. KD is a higher power equivalent used in Eastern Datashfet countries, and is intended for general purpose applications.
Wikimedia Commons has media related to 2N The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor. RCA by had changed their specification to give 2.
The art of electronics 2nd ed. KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. It has a transition frequency of 2. Retrieved from ” https: Retrieved 7 November The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters. It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.
In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N Graf; William Sheets Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.
The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. The robot builder’s bonanza 2nd 2n3305.
Variants with higher voltage ratings e. The total power dissipation written P D in most American datasheets, Datashset tot in European ones depends on the heatsink to which the 2N is connected. It was produced exclusively by the Czechoslovakian electronics company Tesla. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.
New Jersey Semiconductor
The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings. Build your own low-power transmitters: The 2N is a silicon NPN power dataasheet intended for general purpose applications. The exact performance characteristics depend on datasheeh manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.
Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N Retrieved 31 October Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base 2n30335 continued to be used in both linear amplifiers and switching supplies.
This page was last edited on 22 Novemberat The frequency at which gain begins to drop off may be much lower, see below. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.
2N Datasheet, PDF – Alldatasheet
Views Read Edit View history. Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.